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Long-Living Shallow Donor Excited States And Fir-Ir Up-Conversion In Gap:Te

Published online by Cambridge University Press:  15 February 2011

S. D. Ganichev ,
I. N. Yassievich ,
W. Raab ,
E. Zepezauer  and
W. Prettl
S. D. Ganichev
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
I. N. Yassievich
Affiliation:
A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
W. Raab
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
E. Zepezauer
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
W. Prettl
Affiliation:
Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
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Abstract

Tellurium donors in GaP have been ionized by phonon assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component reproducing the laser pulse and a slow component which rises after the irradiation has ceased and finally exponentially decays with a strongly temperature dependent time constant in the range of microseconds to several milliseconds. This temporal structure of the signal is explained by a cascade capture mechanism and subsequent accumulation of carriers in a long-living shallow donor excited state, identified as valley-orbit split 1s(E) level of Te. The final step of recombination is achieved by radiative transitions, which is proved by the observation of far-infrared to mid-infrared up-conversion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 465
Copyright
Copyright © Materials Research Society 1997

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References

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