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I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions

Published online by Cambridge University Press:  17 March 2011

M.A. Kroon ,
R.A.C.M.M. van Swaaij  and
J.W. Metselaar
M.A. Kroon
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
R.A.C.M.M. van Swaaij
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
J.W. Metselaar
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
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Abstract

This paper compares a-Si:H p-i-n diodes having a spatially uniform distribution of defect states with diodes in which the defect distribution is non-uniform, i.e. equilibrated according to the Defect-Pool model. Diodes with a uniform defect distribution exhibit a clear dependence of the current-voltage characteristics on the width of the intrinsic region, whereas in equilibrated diodes, this dependence is absent. This difference is explained by comparing the space-charge distribution and the recombination profile of the intrinsic region in both types of diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A10.3
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Chen, I. and Lee, S., J. Appl. Phys. 53, 1045 (1982).Google Scholar
2. Matsuura, H., Matsuda, A., Okushi, H., and Tanaka, K., J. Appl. Phys. 58, 1578 (1985).Google Scholar
3. Berkel, C. van, Powell, M.J., Franklin, A.R., and French, I.D., J.Appl. Phys. 73, 5264 (1994).Google Scholar
4. Hack, M. and Shur, M., J. Appl. Phys. 54, 5858 (1983).Google Scholar
5. Powell, M.J. and Deane, S.C., Phys. Rev. B. 53, 10121 (1996).Google Scholar
6. Lemmi, F., J. Non-Cryst Solids. 266–269, 1198 (2000).Google Scholar
7. Stutzmann, M., Phil. Mag. B. 60, 531 (1989).Google Scholar
8. Bar-Yam, Y., Adler, D., and Joannopoulos, J.D., Phys. Rev. Lett. 57, 467 (1986).Google Scholar
9. Branz, H.M. and Crandall, R.S., Solar Cells 29, 159 (1989).Google Scholar
10. Zeman, M., Tao, G., Trijssenaar, M., Willemen, J.A., Metselaar, J.W., and Schropp, R.E.I., Mat. Res. Soc. Symp. Proc. 377, 639 (1995).Google Scholar
11. Simmons, J.G. and Taylor, G.W., Phys. Rev. B. 4, 502 (1971).Google Scholar
12.For simplicity it is assumed that the quasi Fermi-levels for free charge carriers are equal to those for trapped charge; Simmons et al. used quasi-Fermi levels for trapped charge [11].Google Scholar
13. Shockley, W. and Read, W.T. Jr, Phys. Rev. B. 87, 835 (1952); R.N. Hall, Phys. Rev. B. 87, 387 (1952).Google Scholar
14. Kroon, M.A., Swaaij, R.A.C.M.M. van, Zeman, M., Kuznetsov, V.I., and Metselaar, J.W., Appl. Phys. Lett. 72, 209 (1998).Google Scholar
15. Biersack, J.P. and Haggmark, L., Nucl. Instrum. Methods 174, 257 (1980).Google Scholar