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Investigation of Recombination Parameters in Ion Implanted Layer-Substrate Si Structures

Published online by Cambridge University Press:  26 February 2011

E. Gaubas ,
K. Jarasiunas ,
A. Kaniava  and
J. Vaitkus
E. Gaubas
Affiliation:
Vilnius University, Institute of Material Science and Applied Research, Laboratory of Optical Diagnostics, Sauletekio 10, 2054 Vilnius, Lithuania
K. Jarasiunas
Affiliation:
Vilnius University, Institute of Material Science and Applied Research, Laboratory of Optical Diagnostics, Sauletekio 10, 2054 Vilnius, Lithuania
A. Kaniava
Affiliation:
Vilnius University, Institute of Material Science and Applied Research, Laboratory of Optical Diagnostics, Sauletekio 10, 2054 Vilnius, Lithuania
J. Vaitkus
Affiliation:
Vilnius University, Institute of Material Science and Applied Research, Laboratory of Optical Diagnostics, Sauletekio 10, 2054 Vilnius, Lithuania
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Abstract

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 603
Copyright
Copyright © Materials Research Society 1995

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References

1. Vaitkus, J., Gaubas, E., Kaniava, A., Lith. Phys. J. 32., 434 (1992).Google Scholar
2. Jonikas, L., Jarasiunas, K., J. Vaitkus, Phys. Stat. Sol. (a), 112, 375 (1989).Google Scholar
3. Vaitkus, J., Gaubas, E., Jarasmnas, K., Petrauskas, M., Semicond. Sci. Technol. 7, A131 (1992).Google Scholar
4. Kvasov, N., Jonikas, L., Jarasiunas, K., Sov. Phys. Semicond. 22, 508 (1988).Google Scholar