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The Interactions Between Misfit Dislocations in InGaAs/GaAs Interfaces.

Published online by Cambridge University Press:  22 February 2011

Philip Kightley ,
Peter J Goodhew  and
Richard Beanland
Philip Kightley
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England, L69 3BX.
Peter J Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England, L69 3BX.
Richard Beanland
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, England, L69 3BX.
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Abstract

The reactions between misfit dislocations arriving by glide at the interface between an In0.12Ga0.88As/GaAs multilayer and a GaAs substrate are analysed and reported. The glide forces for the (a/2)<110> dislocations are calculated as a function of vicinal tilt from (001) to (100). It is observed that the 4% changes in the magnitude of the force for a 2° vicinal angle are not sufficient to significantly alter the relative linear densities of the different types of dislocation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 413
Copyright
Copyright © Materials Research Society 1992

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References

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