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Influence of Impurities and Microstructure on the Resistivity of LPCVD Titanium Nitride Films

Published online by Cambridge University Press:  21 February 2011

M. J. Buiting  and
A. H. Reader
M. J. Buiting
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
A. H. Reader
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
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Abstract

The electrical resistivity of LPCVD TiN films deposited at temperatures between 450 and 700°C has been found to vary from about 900 to 150 μ Ωcm. The elemental composition (Ti:N), impurity content and the microstructure of the films have been investigated in order to explain the resistivity variation. It appears that this variation is directly related to the chlorine (impurity) content of the films. Films deposited at 700°C have both the lowest chlorine content and the lowest value of resistivity. Additionally the difference between the resistivity of this latter film and the (lower) value for bulk TiN is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 199
Copyright
Copyright © Materials Research Society 1990

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