Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T13:58:52.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Industrial Applications of Ion Implantation

Published online by Cambridge University Press:  25 February 2011

J.K. Hirvoney
J.K. Hirvoney*
Affiliation:
Zymet, Inc., 33 Cherry Hill Drive Danvers, MA 01923
Get access

Abstract

The use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.

This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 621
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hartley, N.E.W., Swindlehurst, W.E., Dearnaley, G., and Turner, J.F., J. Mater. Sci. 8, 900–904 (1973).Google Scholar
2. Dearnaley, G., Rad. Effects 63, 1 (1982).Google Scholar
3. Fayeulle, S., Treheux, D., Guiraldenq, P., Barnavon, T., Tousset, J., and Robelet, M., Scripta Met. 17, 459–461 (1983).Google Scholar
4. Cui, F.Z., Li, H. D., and Zhang, X. Z., Nucl. Instr. and Meth. 209/210, 881–887 (1983).Google Scholar
5. Dose Santos, C.A., Behar, M., De Souze, J.P., and Baumvol, I.J.R., Nucl. Instr. and Meth., 209/210, 907–912 (1983).Google Scholar
6. Fromson, R.E. and Kossowsky, R. in: Metastable Materials Formation by Ion Implantation, Picraux, S.T. and Choyke, W.J., eds. (Elsevier, New York 1982) pp. 355–362.Google Scholar
7. Hartley, N.E.W., in: Ion Implantation Case Studies-Manufacturing Applications, Harwell Report AERE-R 9065 (1978).Google Scholar
8. Dearnaley, G., private communication.Google Scholar
9. Hartley, N.E.W. in: Metastable Materials Formation by Ion Implantation, Picraux, S.T. and Choyke, W.J., eds. (Elsevier, New York 1982) pp. 355–362.Google Scholar
10. Dearnaley, G. in: Proc. of NATO Advanced Study Institute on Surface Engineering, Les Arcs France, July, 1982. Kossowsky, R. and Singhal, S., eds.Google Scholar
11. Dearnaley, G. in: Ion Implantation Metallurgy, Preece, C.M. and Hirvonen, J.K., eds. AIME, Warrendale, PA (1980).Google Scholar
12. Deutchman, A.H. and Partyka, R.J. in: Proc. of NATO Advanced Study Institute on Surface Engineering, Les Arcs France July, 1982. Kossowsky, R. and Singhal, S., eds.Google Scholar
13. Williams, J.J., Beardsley, G.M., Buchaman, R.A., and Bacon, R.K., This Proceeding.Google Scholar
14. Harper, J.M.E., and Gambino, R.J., J. Vac. Sci. Technol. 16 1901–1905 (1979).Google Scholar
15. Pranevicius, L., Thin Solid Films 63, 77–85 (1979).Google Scholar
16. Weissmantel, C., Reisse, G., Erler, H.J., Henny, F., Bewilogua, K., Ebersback, U. and Schurer, C., Thin Solid Films 63, 315–325 (1979).Google Scholar
17. Colligon, J., and Hill, A.E.. 6th National Conference on Interaction of Atomic Particles with Solids (Minsk USSR, Sept. 1981).Google Scholar
18. Takagi, T., Thin Solid Films 92, 1–17 (1981).Google Scholar
19. Hoffman, D.W., and Gaerttner, M.R., J. Vac. Sci. Technol. 17 425–428 (1980).Google Scholar
20. Bunshah, R.F., J. Vac. Sci. Technol., 11, 633 (1974).Google Scholar
21. Aisenberg, S. and Chabot, R.. J. Appl. Phys. 42, 2953–2961 (1971).Google Scholar
22. Weissmantel, C., Bewilogua, K., Dietrich, D., Erler, H.J., Hinneberg, H.J., Klose, S., Nowick, W. and Reisse, G., Thin Solid Films 72, 19–31 (1980).Google Scholar
23. Weissmantel, C.J., Vac. Sci. Technol. 18, 179 (1981).Google Scholar
24. Shanfield, S., , S. and Wolfson, R., J. Vac. Sci. Technol. (1983).Google Scholar
25. Satou, M. and Fujimoto, F., Jap. Jour. of Appl. Physics. 22(3) L171–L172, (1983).Google Scholar