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Indium-Carbon Co-Implantation in GaAs

Published online by Cambridge University Press:  26 February 2011

J. H. Madok  and
N. M. Haegel
J. H. Madok
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles
N. M. Haegel
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles
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Abstract

We report on the formation of p+ layers in GaAs by the co-implantation of indium with carbon. Sheet hole concentrations of 2E14 cm−2 were achieved. The co-implant acts to create stoichiometric disturbances and to increase VAs concentration, allowing the C to occupy the vacant As lattice sites. The effect of In on the stoichiometry of the implanted layer was investigated. It was found that addition of 0.1–1% of a group III ion had the effect of shifting the effective As fraction toward the Ga-rich region, thus altering the crystal stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 817
Copyright
Copyright © Materials Research Society 1992

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References

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