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Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

Published online by Cambridge University Press:  25 February 2011

P. T. Murray ,
M. S. Donley  and
N. T. McDevitt
P. T. Murray
Affiliation:
Research Institute, University of Dayton, Dayton, OH 45469
M. S. Donley
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433–6533
N. T. McDevitt
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433–6533
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Abstract

The feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000°C. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 469
Copyright
Copyright © Materials Research Society 1989

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References

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