Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:30:13.590Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Dielectric Thin Films by Irradiation of Condensed Molecular Precursors with Synchrotron Radiation

Published online by Cambridge University Press:  22 February 2011

D. R. Strongin ,
J. F. Moore ,
M. W. Ruckman  and
M. Strongin
D. R. Strongin
Affiliation:
Department of Chemistry, State University of New York, Stony Brook, New York 11794
J. F. Moore
Affiliation:
Department of Chemistry, State University of New York, Stony Brook, New York 11794
M. W. Ruckman
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton, New York11973
M. Strongin
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton, New York11973
Get access

Abstract

Spectroscopic evidence is presented that shows that boron nitride andaluminum oxide can be synthesized by exposing a condensed layer of molecular precursors to synchrotron radiation. In the A12 O3 circumstance a condensed layer of trimethylaluminum (TMA)and water at 78 K on a silver substrate produces pure layers of aluminum oxide. Using the same condensed layer technique boron nitride is produced by exposing a solid matrix of diborane and ammonia to synchrotron radiation. Near edge x-ray absorption fine structure and core level photoelectron spectroscopies are used to characterize the A12 O3 and BN layers, which were typically 30Å thick. During the formation of aluminum oxide the carbon component inthe alkylaluminum precursor is completely removed during irradiation as a volatile methane product which was detected by mass spectrometry. In the absence of synchrotron radiation the molecular precursors in both the aluminum oxide and boron nitride systems show evidence of some interactions within the solid, but upon warming to near room temperature (260 K) the layers desorb from the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 631
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Strongin, D.R., Moore, J.F., and Ruckman, M.W., Appl. Phys. Lett. 61, 729 (1992).Google Scholar
[2] Strongin, D.R., Mowlem, J.K., Ruckman, M.W., and Strongin, M., Appl. Phys. Lett. 60, 2561 (1992).Google Scholar
[3] Mancini, D.C., Varma, S., Simons, J., Rosenberg, R., and Dowben, P.A., J. Vac. Sci. Technol. B8, 1864 (1990).Google Scholar
[4] Urisu, T. and Kyuragi, H., J. Vac. Sci. Technol. B(5)5, 1436 (1987).Google Scholar
[5] Love, P.J., Loda, R.R., Rosenberg, R.A., Green, A.K., Rehn, V., in Laser Assisted Deposition, Etching, and Doping (Society of Photo-Optical Instrumentation Engineers, SPIE, 1984), p. 25.Google Scholar
[6] Wade, K., Electron Deficient Compounds (Thomas Nelson and Sons, London, UK, 1971).Google Scholar
[7] Saito, S., Higeta, K., and Ichinokawa, T., J. Microsc. 142, 141 (1985).Google Scholar
[8] Lubben, D., Motooka, T., Greene, J.E., Wendelken, J.F., Sundgren, J.-E., and Salaneck, W.R., Mat. Res. Symp. Proc. Vol. 101, 151 (1988).Google Scholar
[9] Flodstrom, S.A., Martinson, C.W.B., Bachrach, R.Z., Hagstrom, S.B.M., and Bauer, R.S., Phys. Rev. Letters 40, 907 (1978).Google Scholar
[10] Norman, D., Brennan, S., Jaeger, R., and Stöhr, J., Surf. Sci. 105, L297 (1981).Google Scholar