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The Failure Mechanism of MOCVD TiN Diffusion Barrier at high Temperature

Published online by Cambridge University Press:  15 February 2011

Hoojeong Lee ,
Robert Sinclair ,
Pamela Li  and
Bruce Roberts
Hoojeong Lee
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Pamela Li
Affiliation:
Novellus Systems Inc, 81 Vista Montana, San Jose, CA 95134
Bruce Roberts
Affiliation:
Novellus Systems Inc, 81 Vista Montana, San Jose, CA 95134
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Abstract

By using TDEAT and ammonia gas, MOCVD TiN films were grown at 300°C and 30torr.After annealing in a vacuum furnace at 500°C, 550°C, and 600°C, the TiN films were investigated by transmission electron microscopy (TEM). After annealing at 550°C, both hexagonal and cubic AIN phase were found at the interface between Al and TiN films. A Ti rich phase such as Al3Ti was also found at Al side. The failure mechanism during high temperature annealing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 279
Copyright
Copyright © Materials Research Society 1996

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