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Fabrication of Thermoelectric Devices Using AlInN and InON Films prepared by reactive radio-frequency sputtering

Published online by Cambridge University Press:  01 February 2011

S. Yamaguchi ,
R. Izaki ,
N. Kaiwa ,
S. Sugimura  and
A. Yamamoto
S. Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
R. Izaki
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
N. Kaiwa
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
S. Sugimura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
A. Yamamoto
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
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Abstract

We have studied the thermoelectric properties of AlInN and InON films prepared by reactive radio-frequency (RF) sputtering. We have fabricated thermoelectric devices which are composed of 20-pair nitride or oxynitride films with Chromel metal. For a AlInN device, the maximum output power was 7.6×10-7 W at ΔT = 257K, and for a InON device, that was 6.5×10-8 W at ΔT = 214K.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.56
Copyright
Copyright © Materials Research Society 2004

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References

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