Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:49:05.249Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of a-Si:H/a-Al1−xOx Superlattice by Excimer Laser MOCVD and its Properties

Published online by Cambridge University Press:  26 February 2011

K. Uwasawa ,
F. Ishihara ,
J. Wada  and
S. Matsumoto
K. Uwasawa
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama 223, Japan
F. Ishihara
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama 223, Japan
J. Wada
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama 223, Japan
S. Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama 223, Japan
Get access

Abstract

a-Si:H/a-A11−xOx superlattice structures have been fabricated by ArF excimer laser MOCVD. Periodic variation of composed elements in multilayers with quite uniform layer thickness was clearly shown by SIMS analysis. Optical band gap was increased with the decrease of the well layer thickness, indicating the quantum size effect. With the advantage of the inherent digital process, very sharp interface was obtained, which was confirmed by both XPS and cross sectional TEM analyses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 147
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Abeles, B. and Tiedje, T., Phys. Rev. Lett., 51, 2003 (1983).Google Scholar
2. Hirose, M. and Miyazaki, S., J. Non-Cryst. Solid, 66, 327 (1984).Google Scholar
3. Hirose, M. and Miyazaki, S., J. Non-Cryst. Solid, 97, 23 (1987).Google Scholar
4. Hattori, K., Mori, T., Okamoto, H. and Hamakawa, Y., Mat. Res. Soc. Symp. Proc., 118, 355 (1988).Google Scholar
5. Tsuda, S. et al. Japan. J. Appl. Phys., 26, 28 (1987).Google Scholar
6. Lowndes, D.H., Geohegan, D.B., Eres, D., Pennycook, S.T., Mashburn, D.N. and Jellison, G.E. Jr., Appl. Phys. Lett., 52, 1868 (1988).Google Scholar
7. Tiedje, T., Abeles, B. and Brooks, B.G., Phys. Rev. Lett. 10, 2545 (1985).Google Scholar
8. Kakalios, J., Fritzsch, H. and Ibaraki, N., J. Non-Cryst. Solid, 66, 339 (1984).Google Scholar
9. Itoh, H., Matsubara, S., Muramatsu, S. and Shimotsu, T., Japan. J. Appl. Phys., 27, L24 (1988).Google Scholar
10. Maley, N. and Lannin, J.S., Phys.Rev. B, 31, 5577 (1985).Google Scholar
11. Rajopadhye, N. R., Dakeand, S. B. and Bhoraskar, S. V., Thin Solid Films, 142, 127 (1986).Google Scholar
12. Fundamentals of Surface and Thin Film Analysis, by Feldman, L. C. and Mayer, J. W.(Elsevier Science Publishing Co., Inc., 1986)Google Scholar