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Evolution of D0 and non-D0 Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier Recombination

Published online by Cambridge University Press:  21 March 2011

J. M. Pearce ,
J. Deng ,
V. Vlahos ,
R. W. Collins ,
C. R. Wronski ,
J. Whitaker  and
P. C. Taylor
J. M. Pearce
Affiliation:
Center for Thin Film Devices The Pennsylvania State University
J. Deng
Affiliation:
Center for Thin Film Devices The Pennsylvania State University
V. Vlahos
Affiliation:
Center for Thin Film Devices The Pennsylvania State University
R. W. Collins
Affiliation:
Center for Thin Film Devices The Pennsylvania State University
C. R. Wronski
Affiliation:
Center for Thin Film Devices The Pennsylvania State University
J. Whitaker
Affiliation:
University of Utah
P. C. Taylor
Affiliation:
University of Utah
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Abstract

A study has been carried out on the evolution of light induced defects in protocrystalline (diluted) a-Si:H films under 1 sun illumination. A room temperature reversal is observed in the photocurrents at 25°C, which is consistent with the relaxation in the recombination currents on corresponding p-i-n solar cells. It is also consistent with the pressure of “fast” states such as have been observed after high intensity illumination. Even with the limitations imposed by the relaxation in the light induced changes on the subgap absorption measurements, the evolution of distinctly different gap states centered around 0.9 and 1.15eV from the conduction band was identified. The kinetics of the electron occupied states, kN(E), at these two energies is compared with that of the neutral dangling bond (D0) densities as measured with electron spin resonance. Because of the similarity between the preliminary results of these kinetics it has not been possible to identify which states correspond to the D0 nor to draw any reliable conclusions about the nature of the different states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A2.5
Copyright
Copyright © Materials Research Society 2004

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References

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