Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:51:32.452Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhanced Blue Light Emission From Sexiphenyl Heterostructure EL Device

Published online by Cambridge University Press:  21 March 2011

Yutaka Ohmori ,
Takahisa Tsukagawa  and
Hirotake Kajii
Yutaka Ohmori
Affiliation:
Osaka University, Collaborative Research Center for Advanced Science and Technology (CRCAST) 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Takahisa Tsukagawa
Affiliation:
Osaka University, Collaborative Research Center for Advanced Science and Technology (CRCAST) 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Hirotake Kajii
Affiliation:
Osaka University, Collaborative Research Center for Advanced Science and Technology (CRCAST) 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Get access

Abstract

Enhanced electroluminescence (EL) from vapor deposited p-sexiphenyl (6p) layer has been observed utilizing heterostructure of p-sexiphenyl emissive layer and N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) hole transporting layer. The EL device consists of an indium-tin oxide (ITO) anode, a hole transporting layer, an emissive layer, and a magnesium containing silver cathode. A heterostructure device with 50 nm-thick p-sexiphenyl and 60 nm-thick TPD shows the enhanced emission from the p-sexiphenyl emissive layer. The electroluminescence from the device shows the emission peak centered at 420 nm. The p-sexiphenyl/TPD heterostructure device emits 2 orders of magnitude higher intensity than the conventional single layer of p-sexiphenyl device. The mechanism of enhanced emission from the heterostructure device has been discussed utilizing energy band diagrams of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 660: Symposia JJ – Organic Electronic & Photonic Materials and Devices , 2000 , JJ5.28
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohmori, Y., Uchida, M., Muro, K. and Yoshino, K., Jpn. J. Appl. Phys. 30, L1941–L1943 (1991).Google Scholar
2. Grem, G., Leditzky, G., Ullrich, B. and Leising, G., Advanced Materials 4, 36–37 (1992).Google Scholar
3. Yanagi, H. and Okamoto, S., Appl. Phys. Lett. 71, 2563–2565 (1997).Google Scholar
4. Yanagi, H. and Morikawa, T., Appl. Phys. Lett. 75, 187–189 (1999).Google Scholar
5. Tang, C. W. and VanSlyke, S. A., Appl. Phys. Lett. 51, 913–915 (1987).Google Scholar