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Electronic and Optical Properties of SiGe alloys within first-principles schemes

Published online by Cambridge University Press:  26 February 2011

G. Cappellini ,
G. Satta ,
M. Palummo  and
G. Onida
G. Cappellini
Affiliation:
SLACS-INFM and Dipartimento di Fisica, Università di Cagliari, I-09042 Monserrato (Cagliari), Italy
G. Satta
Affiliation:
SLACS-INFM and Dipartimento di Fisica, Università di Cagliari, I-09042 Monserrato (Cagliari), Italy
M. Palummo
Affiliation:
INFM and Dipartimento di Fisica, II Università di Roma ”Tor Vergata”, I-00133 Rome, Italy
G. Onida
Affiliation:
INFM and Dipartimento di Fisica, Università di Milano, I-20133 Milano, Italy
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Abstract

We present first-principles calculated electronic and optical properties of some SiGe alloys. The ground-state, electronic excitations and optical properties have been calculated with Ge and Si atoms arranged in different ways among the sites of a diamond-type lattice. For the ground state a DFT-LDA scheme and for the electronic excitations a DFT-GW approach have been respectively used. For the optical properties the DFT-LDA-RPA scheme has been applied for alloys going in composition from Si(100%) to Ge(100%): obtained results have been compared with existing experimental and theoretical data. For the noticeable Si(50%)Ge(50%) alloy also two-particle effects have been evaluated using the Bethe-Salpeter equation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.20
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

[1] Ahuja, R. et al., J. Appl. Phys. 93, 3832 (2003)Google Scholar
[2] Abstreiter, C. et al., Phys. Rev. Lett. 54, 2441 (1985)Google Scholar
[3] Pearsall, T.P. et al., Phys. Rev. Lett. 58, 729 (1987)Google Scholar
[4] Presting, H., in Challenges for Si-Ge Heteroepitaxy, edited by Fitzgerald, E., Hoyt, J., Cheng, K.Y., and Bean, J., MRS Symposia Proceedings No. 379 (Materials Research Society, Pittsburgh, 1995 pp. 417–432)Google Scholar
[5] Meyerson, B.S., Sci. Am. 270, 42 (1994)Google Scholar
[6] Tsaur, B.Y., Chen, C.K., and Marino, S.A., Opt. Eng. 33, 72 (1994)Google Scholar
[7] Engvall, J. et al., Appl. Phys. Lett. 63, 491 (1993)Google Scholar
[8] Paul, Douglas, Physics World 13(2), 27–32 (2000)Google Scholar
[9] Braunstein, R., Moore, A. R., Herman, F., Phys. Rev. 109, 695 (1958)Google Scholar
[10] Onida, G., Reining, L., Rubio, A., Rev. Mod. Phys. 74, 601 (2002)Google Scholar
[11] Cappellini, G., Satta, G., Palummo, M., Onida, G., Phys. Rev. B 64, 035104 (2001)Google Scholar
[12] Schmid, U., Christensen, N.E., Cardona, M., Phys. Rev. 41, 5919 (1990)Google Scholar
[13] Theodorou, G., Kelires, P.C., Tserbak, C., Phys. Rev. 50, 18355 (1994)Google Scholar
[14] Remediakis, I.N., Kaxiras, E., Phys. Rev. 59, 5536 (1999)Google Scholar
[15] Hybertsen, M.S. and Louie, S.G., Phys. Rev. B 34, 5390 (1986).Google Scholar
[16] Lautenschlager, P.M. et al., Phys. Rev. B 36, 4821 (1987)Google Scholar
[17] Aspnes, D.E. and Studna, A.A., Phys. Rev. B 27, 985 (1983)Google Scholar
[18] Bahng, J.H. et al., J. Phys.: Condens. Matter 13, 777–786 (2001)Google Scholar