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Electron Microscope Characterization of Pulse Annealed Semiconductors

Published online by Cambridge University Press:  15 February 2011

A. G. CULLIS
A. G. CULLIS*
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, England
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Abstract

The pulse processing techniques that have assumed prominence over the past few years offer various important advantages for device fabrication technology. However, the usefulness of each individual method depends substantially upon the specific annealing mechanism involved. This article demonstrates the role of electron microscopy in elucidating such mechanisms and in analysing annealed semiconductor structures of importance to both research workers and semiconductor technologists. The range of laser and electron beam pulse annealing methods is covered and defect structure transitions observed are related to the solid and liquid phase processes occurring. Characteristic impurity trapping and segregation phenomena are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 393
Copyright
Copyright © Materials Research Society 1981

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