Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T12:00:02.998Z Has data issue: false hasContentIssue false

Electromechanical Properties of Pb(Mg1/3Nb2/3)O3 Thin Film Capacitors

Published online by Cambridge University Press:  10 February 2011

G. Catalan
Affiliation:
Queen's University of Belfast, Condensed Matter Physics & Materials Science Research Division, Belfast BT7 INN, Northern Ireland, UK
M.H. Corbett
Affiliation:
Queen's University of Belfast, Condensed Matter Physics & Materials Science Research Division, Belfast BT7 INN, Northern Ireland, UK
R.M. Bowman
Affiliation:
Queen's University of Belfast, Condensed Matter Physics & Materials Science Research Division, Belfast BT7 INN, Northern Ireland, UK
J.M. Gregg
Affiliation:
Queen's University of Belfast, Condensed Matter Physics & Materials Science Research Division, Belfast BT7 INN, Northern Ireland, UK
Get access

Abstract

Pulsed Laser Deposition was used to grow Pb(Mg1/3Nb2/3)O3 (PMN) thin film planar capacitor structures. PMN crystallography was verified by x-ray diffraction and plan-view Transmission Electron Microscopy (TEM). Capacitance of the thin film structures was measured as a function of temperature and frequency. Leakage current was also measured for each capacitor. A DC field was subsequently applied and crystallographic strain was monitored in-situ by X-ray diffraction. The electromechanical strain was found to strongly depend on the deposition conditions for each capacitor. Tensile strains of ∼0.2% and compressive strains of ∼0.3% parallel to the applied field were measured for capacitors of different oxygen contents and thicknesses. We propose that the compressive strain is caused by the combined effect of joule heating of the capacitor structure, caused by large leakage currents, and epitaxial coupling between substrate and films. Electrostrictive tensile strains are of the same order as observed inbulk.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bums, G. and Dacol, F. H., Solid State Communications, 48, p. 853 (1983)Google Scholar
2. Mathan, N. de, J. Phys: Condensed Matter, 3, p. 8159 (1991)Google Scholar
3. Bonneau, P., Gamier, P., Calvarin, G., Husson, E., Gavarri, J. R., Hewat, A. W. and Morell, A., Journal. Solid State Chem., 91, p. 350 (1991).Google Scholar
4. Smolenskii, G. A., J. Phys. Soc. Jpn. 28, p. 26 (1970).Google Scholar
5. Viehland, D., Jang, S. J., Cross, L. E. and Wuttig, M., J. Appl. Phys, 68, p. 2916 (1990)Google Scholar
6. Glazounov, A. E. and Tagantsev, A. K., Appl. Phys. Lett., 73, p. 856, (1998)Google Scholar
7. Westphal, V., Kleemann, W. and Glinchuk, M. D., Phys. Rev. Lett., 68, p. 847 (1992)Google Scholar
8. Colla, E. V., Koroleva, E. Yu, Okuneva, N. M. and Vakhrushev, S. B., Phys. Rev. Lett., 74, p. 1681 (1995).Google Scholar
9. Uchino, K., Nomura, S., Cross, L.E., Jang, S. J. and Newnham, R. E., J. Appl. Phys 51, p. 1142 (1980).Google Scholar
10. Cross, L.E., Jpn. J. Appl. Phys 34, p. 2525 (1995).Google Scholar
11. Uchino, K., Ceram. Bullet. 65, p. 647 (1986).Google Scholar
12. Park, S.E. and Shrout, T. R., Mat. Res. Inn. 1, p. 20 (1997).Google Scholar
13. Park, S.E. and Shrout, T. R., J. Appl. Phys. 82, p.1804 (1997).Google Scholar
14. Tantigate, C., Lee, J., Safari, A., Appl. Phys. Lett. 66, p. 1611 (1995).Google Scholar
15. Kinghelman, Z., Damjanovic, D., Seifert, A., Sagalowicz, L. and Setter, N., Appl. Phys. Lett 73, p. 2281 (1998).Google Scholar
16. Pignolet, A., Roy, R.A., Doyle, J.P., Cuomo, J.J., J. Vac. Sci. Technol. 12, p. 2840 (1994).Google Scholar
17. Hou, S.Y., Kwo, J., Watts, R. K., Cheng, J. Y., Fork, D. K., Appl. Phys. Lett. 67, p. 1387 (1995).Google Scholar
18. Lines, M. E. and Glass, A. M., Principles and Applications of Ferroelectrics and Related Materials Clarendon Press-Oxford, 1977 pp. 117-.Google Scholar
19. Fukuda, Y., Numata, K., Aoki, K., Nishimura, A., Jpn. J. Appl. Phys. 35, p. 5178 (1996).Google Scholar
20. Lattard, E., Lejeune, M. and Abelard, P., J. Phys. III 4, p. 1165 (1994).Google Scholar
21. Zhao, J., Glazounov, A. E., Zhang, Q. M. and Toby, B., Appl. Phys. Lett. 72, p. 1048 (1998).Google Scholar