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Electrical Resistivity of Three Polymorphs of Basi2 and P-T Phase Diagram

Published online by Cambridge University Press:  15 February 2011

M. Imai  and
T. Hirano
M. Imai
Affiliation:
National Research Institute for Metals, 1–2–1 Sengen, Tsukuba, Ibaraki 305, Japan
T. Hirano
Affiliation:
National Research Institute for Metals, 1–2–1 Sengen, Tsukuba, Ibaraki 305, Japan
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Abstract

This paper reports a pressure-temperature phase diagram for BaSi2 and evaluates the electrical resistivity of orthorhombic, cubic and trigonal BaSi2. In-situ X-ray diffraction measurements revealed the transition sequence of cubic and trigonal BaSi2 from orthorhombic BaSi2 at high pressures and high temperatures. The electrical resistivity measurements of three polymorphs show that the electrical properties depend on the crystal structure: orthorhombic BaSi2is an n-type semiconductor as previously reported; cubic BaSi2is an n-type semiconductor; trigonal BaSi2is a hole metal that shows superconductivity with an onset temperature of 6.8K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 567
Copyright
Copyright © Materials Research Society 1996

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