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The Effect of Post-Anodization Chemical Etching on Porous Silicon Investigated by Means of Photoluminescence and Ir Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Nobutomo Uehara ,
Tetsuya Yamazaki ,
Akiharu Kobayashi ,
Shinji Fujihara ,
Masato Ohmukai  and
Yasuo Tsutsumi
Nobutomo Uehara
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Tetsuya Yamazaki
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Akiharu Kobayashi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Shinji Fujihara
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Masato Ohmukai
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
Yasuo Tsutsumi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Hyogo 674-8501, Japan, [email protected]
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Abstract

We studied the effect of post-anodization chemical etching on porous silicon by means of photoluminescence (PL), Fourier transform infrared (FTIR) absorption and Raman spectroscopy. We performed these measurements with repeating etching and then observed the variation of the spectra. On the basis of the correlation between PL and FTIR spectral changes, the PL emission at 660 and 730 nm in PL spectra stems from Si-H2, and Si-H clusters at surface, respectively. Raman spectra show a close relation between PL emission at 850 nm and nanocrystallites in porous silicon. In addition, chemical etching contributes to the promotion of nanocrystallites and to dissolving them.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 157
Copyright
Copyright © Materials Research Society 1999

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References

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