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Crucible Selection in AlN Bulk Crystal Growth

Published online by Cambridge University Press:  01 February 2011

Rafael Dalmau ,
Balaji Raghothamachar ,
Michael Dudley ,
Raoul Schlesser  and
Zlatko Sitar
Rafael Dalmau
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
Balaji Raghothamachar
Affiliation:
Dept. of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794–2275, U.S.A.
Michael Dudley
Affiliation:
Dept. of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794–2275, U.S.A.
Raoul Schlesser
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
Zlatko Sitar
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
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Abstract

Growth of AlN bulk single crystals by sublimation of AlN powder was carried out in a resistively heated reactor at temperatures up to 2300°C. A variety of crucible materials, such as BN, W, Ta, Re, ZrO2, TaN, and TaC, were evaluated. Our studies have shown that the morphology of crystals grown by spontaneous nucleation strongly depends on the growth temperature and contamination in the reactor. Crucible selection had a profound effect on contamination in the crystal growth environment, thus influencing nucleation, coalescence, and crystal morphology. Spontaneously grown single crystals up to 15 mm in size were characterized by x-ray diffraction (XRD), x-ray topography (XRT), glow discharge mass spectrometry (GDMS), and secondary ion mass spectrometry (SIMS). Average dislocation densities were on the order of 103 cm−3, with extended areas virtually dislocation-free, while high-resolution XRD showed rocking curves as narrow as 7 arcsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y2.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Rojo, J. C., Slack, G. A., Morgan, K., Raghothamachar, B., Dudley, M. and Schowalter, L. J., J. Cryst. Growth 231, 317 (2001).Google Scholar
2. Edgar, J. H., Liu, L., Zhuang, D., Chaudhuri, J., Kuball, M. and Rajasingam, S., J. Cryst. Growth 246, 187 (2002).Google Scholar
3. Schlesser, R., Dalmau, R. and Sitar, Z., J. Cryst. Growth 241, 416 (2002).Google Scholar
4. Epelbaum, B. M., Hofmann, D., Bickermann, M. and Winnacker, A., Mater. Sci. Forum 389–393, 1445 (2002).Google Scholar
5. Singh, N. B., Berghmans, A., Zhang, H., Wait, T., Clarke, R. C., Zingaro, J. and Golombeck, J. C., J. Cryst. Growth 250, 107 (2003).Google Scholar
6. Slack, G. A. and McNelly, T. F., J. Cryst. Growth 34, 263 (1976).Google Scholar
7. Bickermann, M., Epelbaum, B. M. and Winnacker, A., phys. stat. sol. (c), accepted for publication (2003).Google Scholar
8. Dudley, M., in Encyclopedia of Advanced Materials, edited by Bloor, D., Brook, R. J., Flemings, M. C. and Mahajan, S. (Pergamon Press, New York, 1994) p. 2950.Google Scholar
9. Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., Michaels, E. and Kolis, J. W., J. Cryst. Growth 246, 271 (2002).Google Scholar