Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T12:56:31.075Z Has data issue: false hasContentIssue false

Correlations Between Composition, Texture, and Polarization in SrxBiyTa2O5+x+3y/2 Thin Films Deposited by MOCVD

Published online by Cambridge University Press:  10 February 2011

Bryan C. Hendrix
Affiliation:
ADCS, an ATMI Company, 7 Commerce Dr., Danbury, CT 06810, [email protected]
Frank Hintermaieri
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Debra A. Desrochers
Affiliation:
ADCS, an ATMI Company, 7 Commerce Dr., Danbury, CT 06810
Jeffrey F. Roeder
Affiliation:
ADCS, an ATMI Company, 7 Commerce Dr., Danbury, CT 06810
Thomas H. Baum
Affiliation:
ADCS, an ATMI Company, 7 Commerce Dr., Danbury, CT 06810
Christine Dehm
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Nikolas Nagel
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Wolfgang Honlein
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Carlos Mazure
Affiliation:
Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany
Get access

Abstract

SrxBiyTa2O5+x+3y/2 (SBT) is a promising material for ferroelectric random access memories (FeRAM's) because of its inherently high resistance to fatigue and imprint. Metalorganic chemical vapor deposition (MOCVD) offers the ability to produce high quality, conformal SBT films for both high and low density memory applications. An MOCVD process based on liquid delivery and flash vaporization has been developed which allows precise control of film stoichiometry and thickness. In this study, wavelength dispersive x-ray fluorescence and x-ray diffractometry have been used to survey composition and preferred crystallographic orientation (texture) relationships. It is shown that as-deposited film composition can be used to influence the texture of the Aurivillius phase in the annealed film. The polarization of the films increases with increasing (115) and (200)/(020) peak intensity due to the relationship of the electric field direction with the polarization direction in the film. The highest values of polarization are found with Sr content, x<0.8 and Bi content, 2.1 <y<2.6.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Buskirk, P.C. Van, Roeder, J.F., Baum, T.H., Bilodeau, S.M., Russell, M.W., Johnston, S.T., Carl, R.J., Desrochers, D.A., Hendrix, B.C., Hintermaier, F., Integrated Ferroelectrics 21, 273 (1998).Google Scholar
2 Noguchi, T., Hase, T., Miyasaka, Y., Jpn. J. Appl. Phys. 35, Pt. 1, 4900 (1996); T. Hase, T. Noguchi, K. Amanuma, Y. Miyasaka, Integrated Ferroelectrics 15, 127 (1997).Google Scholar
3 Isobe, C., Hironaka, K., Sugiyama, M., Katori, K., Wanatabe, K., Ikeda, Y., Ami, T., Ochiai, A., Tanaka, M., Asano, K., Yagi, H., presented at the 10th International Symposium on Integrated Ferroelectrics, March 1-4, 1998, Monterey, CA, USA.Google Scholar
4 See for example, Jona, F. and Shirane, G., Ferroelectric Crystals, (Pergamon, Oxford, 1962, reprinted by Dover, Mineola, NY. 1993) p. 275.Google Scholar
5 Koiwa, I., Kanehara, T., Mita, J., Iwabuchi, T., Osaka, T., Ono, S., in Extended Abstracts of the 1996 International Conf On Solid State Devices and Materials, Yokohama, Japan (1996) pp 628630.Google Scholar
6 Buskirk, P.C. Van, Bilodeau, S.M., Roeder, J.F., Kirlin, P.S., Jpn. J. Appl. Phys. 35, Pt. 1, 2520 (1996).Google Scholar
7 Hendrix, B.C., Hintermaier, F., Desrochers, D.A., Roeder, J.F., Bhandari, G., Chappuis, M., Baum, T.H., Buskirk, P.C. Van, Dehm, C., Fritsch, E., Nagel, N., Honlein, W., Mazure, C., in Ferroelectric Thin Films VI, edited by Treece, R.E., Jones, R.E., Foster, C.M., Desu, S.B., Yoo, I.K. (Mater. Res. Soc. Proc. 493, Pittsburgh, PA, 1998) pp. 225230; F. Hintermaier, B. Hendrix, D. Desrochers, J. Roeder, T. Baum, P.C. Van Buskirk, D. Bolton, M. Grossmann, O. Lohse, M. Shumacher, R. Waser, H. Cerva, C. Dehm, E. Fritsch, W. Honlein, C. Mazure, N. Nagel, P. Thwaite, H. Wendt, Integrated Ferroelectrics 21, 367 (1998), Proc. VLSI, Hawaii, June, 1998.Google Scholar
8 Rae, A.D., Thompson, J.G., Withers, R.L., Acta Cryst. B48 418 (1992).Google Scholar
9 Li, Z., Foster, C.M., Dai, X.H., Xu, X.Z., Chan, S.K., Lam, D.J., J. Appl. Phys. 71, 4481 (1992).Google Scholar
10 Smyth, D.M. (private communication).Google Scholar