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Combined UHV and Liquid Phase (CULP) Processing of Self-assembled Nanostructures

Published online by Cambridge University Press:  15 February 2011

Samil E. Ogun  and
Raymond T. Tung
Samil E. Ogun
Affiliation:
Department of Physics, Brooklyn College, City University of New York, Brooklyn, NY, 11210 USA
Raymond T. Tung
Affiliation:
Department of Physics, Brooklyn College, City University of New York, Brooklyn, NY, 11210 USA
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Abstract

The fabrication and structures of nanometer sized metal and semiconductor dots by a new “combined UHV and liquid-phase processing” (CULP) method are investigated. Ultrahigh vacuum deposition of monolayers of material, buffered and co-adsorbed along with chemically-inert working gas molecules, and subsequent pressurization in situ with high purity helium, led to self-assembly of metal and semiconductor nanoparticles in the liquid phase. The density and size distribution of nanoparticles were found to depend on processing parameters including the substrate surface condition and the dilution of the co-adsorbed film. These results are discussed in terms of surface and interface energies and kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 879: Symposium Z – Chemistry of Nanomaterial Synthesis and Processing , 2005 , Z10.36
Copyright
Copyright © Materials Research Society 2005

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