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1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

M. Kechouane ,
N. Beldi ,
T. Mohammed-Brahim ,
H. L'Haridon ,
M. Salvi  and
M. Gauneau
M. Kechouane
Affiliation:
Lab “Les Couches Minces”, USTBH, Institut de Physique, BP 32, el alia, ALGER, ALGERIE
N. Beldi
Affiliation:
Lab “Les Couches Minces”, USTBH, Institut de Physique, BP 32, el alia, ALGER, ALGERIE
T. Mohammed-Brahim
Affiliation:
Lab “Les Couches Minces”, USTBH, Institut de Physique, BP 32, el alia, ALGER, ALGERIE
H. L'Haridon
Affiliation:
FRANCE TELECOM/CNET, LAB OCM, BP 40, 22301 LANNION, FRANCE P.N. Favennec FRANCE TELECOM/CNET, SAS, BP 40, 22301 LANNION, FRANCE
M. Salvi
Affiliation:
FRANCE TELECOM/CNET, LAB OCM, BP 40, 22301 LANNION, FRANCE P.N. Favennec FRANCE TELECOM/CNET, SAS, BP 40, 22301 LANNION, FRANCE
M. Gauneau
Affiliation:
FRANCE TELECOM/CNET, LAB OCM, BP 40, 22301 LANNION, FRANCE P.N. Favennec FRANCE TELECOM/CNET, SAS, BP 40, 22301 LANNION, FRANCE
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Abstract

The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. The Er+ emission intensity strongly depends on the hydrogen film content and on the measurement temperature. A direct correlation between the optical gap energy of the semiconductor and the hydrogen film content is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 453
Copyright
Copyright © Materials Research Society 1993

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References

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