High Resolution Characterization of Nanoelectronic Materials for Advanced Semiconductor Process Development
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Electron-beam Induced Interfacial Layer at Ni-BaTiO3 Interfaces of MLCC
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- 05 August 2007, pp. 802-803
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HRTEM Study on the Interface of Si-based Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding Technology
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- 05 August 2007, pp. 804-805
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STM Light Emission from Si (111)-7x7 and Si (111)-4x1-In Surfaces: Optical Investigation with Atomic Resolution
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- 05 August 2007, pp. 806-807
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In-situ Observation of Structural Change and Failure Detection for Electrically Active Devices in TEM
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- 05 August 2007, pp. 808-809
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Field-Induced Crystallization of Anodized Nb and NbO Electrolytic Capacitors
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- 05 August 2007, pp. 810-811
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The Pinning Landscape in High Temperature Superconductor Tapes Revealed by Three-dimensional Characterization of Microstructure
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- 05 August 2007, pp. 812-813
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The Role of Polar Oxide Surface Reconstruction on the Atomic Structure of Polar Oxide Films: HRTEM and SAD Study of Hematite Growth on Magnesia
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- 05 August 2007, pp. 814-815
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Defects in III-Nitrides-based Distributed Bragg Reflectors
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- 05 August 2007, pp. 816-817
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Examining the Microstructure and Impurity Distribution of Narrow Lines and Vias
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- 05 August 2007, pp. 818-819
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Dopant Ordering in Antiferromagnetic Semiconducting Ti Doped Alpha-Fe2O3 Revealed by Electron Diffraction
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- 05 August 2007, pp. 820-821
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Cylindrical Specimen Geometries for Sub-nm 3-D Characterization of Semiconductor Devices
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- 05 August 2007, pp. 822-823
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Electron Tomography of Semiconductor Devices
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- 05 August 2007, pp. 824-825
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Characterization and Tomography of Nanoscale Domain Structures in Ferroelectric and Multiferroic Layered Oxides
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- 05 August 2007, pp. 826-827
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Three Dimensional Compositional Characterization of Dielectric Films with LEAP Tomography
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- 05 August 2007, pp. 828-829
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Annular Dark Field Image Contrast of Strained GaNyAs1-y Epitaxial Layers on GaAs
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- 05 August 2007, pp. 830-831
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Analysis of Nanoscale Stress Fields in Semiconductor Materials and Devices
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- 05 August 2007, pp. 832-833
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A Novel Automated Method to Measure Strain at the Nano Scale
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- 05 August 2007, pp. 834-835
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Strain Measurements Using Nano-Beam Diffraction on a FE-STEM
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- 05 August 2007, pp. 836-837
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Determination of Strain in the Silicon Channel Induced by a Metal Electrode
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- 05 August 2007, pp. 838-839
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Strain Fields at a Thin Ge-Sn Layer Sputtered on Ge by Cs Corrected HREM
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- 05 August 2007, pp. 840-841
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