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Toward Quantitative Annular Dark Field Imaging

Published online by Cambridge University Press:  02 July 2020

R.R. Vanfleet
R.R. Vanfleet*
Affiliation:
Advanced Materials Processing and Analysis Center (AMPAC) and the Department of Physics, University of Central Florida, Orlando, Florida, 32816
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Abstract

Annular Dark Field imaging has the potential to be directly quantifiable. By this I mean that with careful measurement, the absolute image intensity has physical meaning. Unlike Bright Field TEM, the ADF image has no contrast reversals with focus and with the exception of thick specimens there are no contrast reversals with changes in thickness. Thus, image intensity is related to thickness, composition, orientation, and structure of local regions whose size is determined by the electron probe. The ability to extract quantitative information about the specimen from the intensity requires careful collection of the intensity data and a solid understanding of how that intensity will change with thickness, composition, orientation, and structure. The qualitative effect of thickness and composition has been well shown in the literature but more quantitative approaches have been lacking.

The simplest models of ADF imaging treat each atom interacting

Type
Quantitative STEM: Imaging and EELS Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 188 - 189
Copyright
Copyright © Microscopy Society of America 2001

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References

references

1.Vanfleet, R.R.et al., in “Characterization and Metrology for ULSI Technology: 1998 International Conference“ edited by Seiler, D.G., Diebold, A.C., Bullis, W.M., Shaffner, T.J., McDonald, R., and Walters, E.J., (AIP press, 1998).Google Scholar
2.Perovic, D.D. and Paterson, J.H., Proc. 49thAnnual EMSA Meeting, Ed. Bailey, G.W. (San Francisco Press, San Francisco, 1991) p. 704.Google Scholar
3.Perovic, D.D., Rossouw, C.J., and Howie, A., Ultramicroscopy 52, 353 (1993).CrossRefGoogle Scholar
4.Vanfleet, R.R., et al., “A Stem Study of a Germanium Island-Silicon Interface“, Microscopy & Microanalysis 1999.CrossRefGoogle Scholar