Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-23T17:41:58.418Z Has data issue: false hasContentIssue false
  • English
  • Français

Off-axis Electron Holography for 2D Dopant Profiling in p- and n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

Published online by Cambridge University Press:  05 September 2003

K. Vogel ,
A. Lenk ,
H. Lichte ,
H.-J. Engelmann ,
U. Mühle  and
B. Freitag
K. Vogel
Affiliation:
Triebenberg Laboratory, Institute of Applied Physics (IAPD), University of Dresden, D-01062 Dresden, Germany
A. Lenk
Affiliation:
Triebenberg Laboratory, Institute of Applied Physics (IAPD), University of Dresden, D-01062 Dresden, Germany
H. Lichte
Affiliation:
Triebenberg Laboratory, Institute of Applied Physics (IAPD), University of Dresden, D-01062 Dresden, Germany
H.-J. Engelmann
Affiliation:
AMD Saxony LLC & Co. KG, Dresden, Germany
U. Mühle
Affiliation:
Infineon Technologies Dresden, Germany
B. Freitag
Affiliation:
FEI Company, Eindhoven, The Netherlands
Get access

Abstract

An abstract is not available for this content so a preview has been provided. Please use the Get access link above for information on how to access this content.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Invited Papers
Information
Microscopy and Microanalysis , Volume 9 , Issue S03 , September 2003 , pp. 240 - 241
Copyright
Copyright © Microscopy Society of America 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)