Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-23T10:34:20.183Z Has data issue: false hasContentIssue false

Non-destructive Imaging of Extend Defects in III-nitride Thin film Structures Using Electron Channelling Contrast Imaging

Published online by Cambridge University Press:  04 August 2017

G. Naresh-Kumar
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
M. Nouf-Allehiani
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
D. Thomson
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
E. Pascan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
B. Hourahine
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
C. Trager-Cowan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Naresh-Kumar, G., etal, Phys. Rev. Lett. 108 2012). p. 135503.Google Scholar
[2] Naresh-Kumar, G., et al, Appl. Phys. Lett 102 2013). p. 142103.Google Scholar
[3] Nouf-Allehiani, M., et al. submitted to Phys. Rev. B, (2017).Google Scholar
[4]Pascal, E. et al. under review in Materials Today Proceedings (2017).Google Scholar
[5] The authors acknowledge support from the EPSRC, Grant Number EP/M015181/1, “Manufacturing of nano-engineered III-N semiconductors”.Google Scholar