Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T18:53:30.200Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence for Active Atomic Defects in Monolayer Hexagonal Boron Nitride

Published online by Cambridge University Press:  27 August 2014

Ovidiu Cretu ,
Yung-Chang Lin  and
Kazutomo Suenaga
Ovidiu Cretu
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Nanotube Research Center, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Yung-Chang Lin
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Nanotube Research Center, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Kazutomo Suenaga
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Nanotube Research Center, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1728 - 1729
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Cretu, O, Lin, Y-C, Suenaga, K Nano Lett. DOI: 10.1021/nl404735w (2014).Google Scholar
[2] This work was supported by a JST Research Acceleration program.Google Scholar