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Advances in heteroepitaxial integration of III-V and IV-VI semiconductors with electron channeling contrast imaging

Published online by Cambridge University Press:  30 July 2021

Eamonn Hughes ,
Brian Haidet ,
Bastien Bonef ,
Jennifer Selvidge ,
Chen Shang ,
Justin Norman ,
John Bowers  and
Kunal Mukherjee
Eamonn Hughes
Affiliation:
University of California Santa Barbara, United States
Brian Haidet
Affiliation:
University of California Santa Barbara, United States
Bastien Bonef
Affiliation:
University of California Santa Barbara, United States
Jennifer Selvidge
Affiliation:
University of California Santa Barbara, United States
Chen Shang
Affiliation:
University of California Santa Barbara, United States
Justin Norman
Affiliation:
University of California Santa Barbara, United States
John Bowers
Affiliation:
University of California Santa Barbara, United States
Kunal Mukherjee
Affiliation:
Stanford University, Stanford, California, United States

Abstract

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Type
Defects in Materials: How We See and Understand Them
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 908 - 910
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

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