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Quantitative Strain Measurement in Sub-45 nm CMOS Transistors by Convergent Beam Electron Diffraction (CBED) at Low Temperature and Nano Beam Diffraction (NBD)

Published online by Cambridge University Press:  03 August 2008

L Clement  and
D Delille
L Clement
Affiliation:
STMicroelectronics, France
D Delille
Affiliation:
FEI Company, The Netherlands
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Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Type
Research Article
Information
Microscopy and Microanalysis , Volume 14 , Supplement S2 , August 2008 , pp. 386 - 387
Copyright
© 2008 Microscopy Society of America

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