Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T07:39:18.031Z Has data issue: false hasContentIssue false
  • English
  • Français

In SEM a New Method for Nondestructive Internal Microtomography of Semiconductors and IC

Published online by Cambridge University Press:  02 July 2020

Zhuguan Liang ,
Ling Xia ,
Yawen Li ,
Jian Wang ,
Kailin Zhou ,
Ping Li ,
Xiaohua Xu ,
E.I. Rau  and
Wenguo Hu
Zhuguan Liang
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Ling Xia
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Yawen Li
Affiliation:
Kunming Institute of Physics, Kunming, 650223, China
Jian Wang
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Kailin Zhou
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Ping Li
Affiliation:
Kunming Institute of Physics, Kunming, 650223, China
Xiaohua Xu
Affiliation:
Kunming Institute of Physics, Kunming, 650223, China
E.I. Rau
Affiliation:
MSU, Moscow, Russia
Wenguo Hu
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Get access

Abstract

It is very important to study a new method of nondestructive internal microtomography of semiconductors and IC. in this paper, we report some research results that were obtained in resent years using nondestructive internal microtomography (NDIMT) to study semiconductor materials(SM) and microelectronic devices (MD) in SEM. Now we can apply this method to detect the microstructures and defects in the subsurface of SM. The conditions of microstructures and the defects being or not in the subsurface of SM used directly depend on the quality of MD. By attaching a special attachment that was devised based on the NDIMT to SEM we can perform nondestructive internal microtomographic visualization of the subsurface of SM the tested SM may be used latter to produce MD. in this way NDIMT may be used to select good quality SM which can then be used for research and production of MD. The product yield and reliabilities of MD can therefore be improved.

Type
Microscopy in the Real World: Semiconductors and Materials
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 488 - 489
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Hu, Wenguo etal.., Journal of Chinese Electron Microscopy Society 17(5), (1998) 682.Google Scholar
2. This research project was financed by State Science Technology Ministry of China, National Natural Science Foundation of China, and Yunnan Applied-base Research Foundation.Google Scholar