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Characterization of SiGe Films for Use as a National Institute of Standards and Technology Microanalysis Reference Material (RM 8905)

Published online by Cambridge University Press:  24 December 2009

Ryna B. Marinenko ,
Shirley Turner ,
David S. Simons ,
Savelas A. Rabb ,
Rolf L. Zeisler ,
Lee L. Yu ,
Dale E. Newbury ,
Rick L. Paul ,
Nicholas W.M. Ritchie  and
Stefan D. Leigh
...Show all authors
Ryna B. Marinenko*
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Shirley Turner
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
David S. Simons
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Savelas A. Rabb
Affiliation:
Analytical Chemistry Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Rolf L. Zeisler
Affiliation:
Analytical Chemistry Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Lee L. Yu
Affiliation:
Analytical Chemistry Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Dale E. Newbury
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Rick L. Paul
Affiliation:
Analytical Chemistry Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Nicholas W.M. Ritchie
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Stefan D. Leigh
Affiliation:
Statistical Engineering Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Michael R. Winchester
Affiliation:
Analytical Chemistry Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Lee J. Richter
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Douglas C. Meier
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Keana C.K. Scott
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Donna Klinedinst
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
John A. Small
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
*
Corresponding author. E-mail: [email protected]
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Abstract

Bulk silicon-germanium (SiGe) alloys and two SiGe thick films (4 and 5 μm) on Si wafers were tested with the electron probe microanalyzer (EPMA) using wavelength dispersive spectrometers (WDS) for heterogeneity and composition for use as reference materials needed by the microelectronics industry. One alloy with a nominal composition of Si0.86Ge0.14 and the two thick films with nominal compositions of Si0.90Ge0.10 and Si0.75Ge0.25 on Si, evaluated for micro- and macroheterogeneity, will make good microanalysis reference materials with an overall expanded heterogeneity uncertainty of 1.1% relative or less for Ge. The bulk Ge composition in the Si0.86Ge0.14 alloy was determined to be 30.228% mass fraction Ge with an expanded uncertainty of the mean of 0.195% mass fraction. The thick films were quantified with WDS-EPMA using both the Si0.86Ge0.14 alloy and element wafers as reference materials. The Ge concentration was determined to be 22.80% mass fraction with an expanded uncertainty of the mean of 0.12% mass fraction for the Si0.90Ge0.10 wafer and 43.66% mass fraction for the Si0.75Ge0.25 wafer with an expanded uncertainty of the mean of 0.25% mass fraction. The two thick SiGe films will be issued as National Institute of Standards and Technology Reference Materials (RM 8905).

Keywords

EPMAelectron probe microanalysisheterogeneitymicroanalysis reference materialsmicroelectronicsmicroheterogeneitySiGe filmsSiGe technology
Type
Thick and Thin Films: Standards and Analysis
Information
Microscopy and Microanalysis , Volume 16 , Issue 1 , February 2010 , pp. 1 - 12
Copyright
Copyright © Microscopy Society of America 2010

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