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Growth defects in GaN films on sapphire: The probable origin of threading dislocations

Published online by Cambridge University Press:  31 January 2011

X. J. Ning ,
F. R. Chien ,
P. Pirouz ,
J. W. Yang  and
M. Asif Khan
X. J. Ning
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
F. R. Chien
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
J. W. Yang
Affiliation:
APA Optics, Inc., Blaine, Minnesota 55434
M. Asif Khan
Affiliation:
APA Optics, Inc., Blaine, Minnesota 55434
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Abstract

Single crystal GaN films with a wurtzite structure were grown on the basal plane of sapphire. A high density of threading dislocations parallel to the c-axis crossed the film from the interface to the film surface. They were found to have a predominantly edge character with a Burgers vector. In addition, dislocation hal-loops, elongated along the c-axis of GaN, were also found on the prism planes. These dislocations had a mostly screw character with a [0001] Burgers vector. Substrate surface steps with a height of were found to be accommodated by localized elastic bending of GaN (0001)GaN planes in the vicinity of the film/substrate interface. Observations show that the region of the film, with a thickness of ∼100 nm, adjacent to the interface is highly defective. This region is thought to correspond to the low-temperature GaN “buffer” layer which is initially grown on the sapphire substrate. Based on the experimental observations, a model for the formation of the majority threading dislocations in the film is proposed. The analysis of the results leads us to conclude that the film is under residual biaxial compression.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 3 , March 1996 , pp. 580 - 592
Copyright
Copyright © Materials Research Society 1996

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